[17a-K305-1~9] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[17a-K305-6] Design of MOSFET on Standard Si Photonics for Suppression of Short-channel Effects

〇Yuto Miyatake¹, Mitsuru Takenaka¹, Makoto Ikeda¹ (1.Univ. Tokyo)

Keywords:

Si Photonics,MOSFET,Photonic Integrated Circuits

Within the design rules of standard silicon photonics processes, the design of a side-gate MOSFET with a channel on the sidewall of the SOI layer was improved to suppress the short-channel effect. Based on simulation analysis, we successfully suppressed the short-channel effect and reduced the threshold voltage by making the source-drain junction shallower, introducing substrate doping directly under the channel, and inverting the polarity of the gate doping. We succeeded in increasing the drain current by shortening the channel length.