[17a-K309-1~9] 3.12 Semiconductor optical devices

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[17a-K309-1] Channel Dimensions dependence on voids density of Gas-Out-Channel InP/Si Substrates using Hydrophilic Direct Bonding

〇(DC)Liang Zhao¹, Mizuki Kuroi¹, Ban ChaoKe¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:

Hydrophilic Direct Bonding,Silicon photonics,Gas Out Channe