[17a-K309-1~9] 3.12 Semiconductor optical devices

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K309-3] Proposal of 1-µm-band InGaAs membrane lasers and investigation of Optical Confinement

〇(B)Shun Ito¹, Yoshitaka Oiso¹, Suguru Yoshida¹, Nobuhiko Nishiyama^1,2 (1.Science Tokyo, 2.IIR)

Keywords:

semiconductor laser

We have proposed a semiconductor membrane laser on a silicon substrate as a light source for on-chip optical interconnection that can solve the problems of heat generation and signal delay in large-scale integrated circuits, and have demonstrated its effectiveness using GaInAsP/InP-based materials. However, InP-based materials have limitations when considering temperature characteristics based on XPU heat generation. In this study, we proposed the introduction of 1-µm InGaAs/GaAs-based semiconductors and investigated their optical confinement structure for stable operation at high temperature of membrane lasers.