[17a-K309-1~9] 3.12 Semiconductor optical devices

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-K309-6] GaP Etching Characteristics with Chlorine Neutral-Beam for AlGaInP Red Micro LEDs

〇(B)Takahiro Kuribayashi¹, Daisuke Ohori¹, Xuelun Wang^3,4, Kazuhiko Endo^1,2, Seiji Samukawa^4,1 (1.IFS, Tohoku Univ., 2.AIST, 3.IMaSS, Nagoya Univ., 4.NYCU)

Keywords:

Neutral-Beam,GaP Processing