[17a-K309-1~9] 3.12 Semiconductor optical devices

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[17a-K309-7] Broad Band Photoluminescence from InGaAs/GaAsSb Type-II Quantum Well and Application to Super Luminescent Diode

〇Hikaru Nakano¹, Kunitake Koichiro¹, Yanagimoto Takumi¹, Usui Kazuki¹, Takashima Rikuto¹, Fujisawa Takeshi², Arai Masakazu¹ (1.Univ. Miyazaki, 2.Hosei Univ.)

Keywords:

Super Luminescent Diode

In this study, we investigate a broadband structure utilizing Type-II heteromaterials consisting of InGaAs and GaAsSb, as well as its application to superluminescent diodes. Quantum wells with a Type-II heterostructure composed of InGaAs and GaAsSb, along with InGaAs/GaAs quantum wells for comparison, were fabricated using a metal-organic vapor phase epitaxy system. The excitation intensity dependence was examined using photoluminescence (PL). As a result, it was confirmed that the quantum well structure consisting of InGaAs/GaAsSb exhibited a significantly broader bandwidth compared to the reference single-layer InGaAs/GaAs quantum well.