[17a-K309-1~9] 3.12 Semiconductor optical devices

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[17a-K309-8] Fabrication of 1.3-µm Band InGaAs/GaAsSb/InGaAs Type-II Laser Grown by Metal Organic Vapor Phase Epitaxy

〇Takumi Yanagimoto¹, Kazuki Usui¹, Rikuto Takashima¹, Koichiro Kunitake¹, Hikaru Nakano¹, Masakazu Arai¹ (1.Univ. Miyazaki)

Keywords:

semiconductor laser

The demand for high-temperature lasers has been increasing to meet the growing demand for information and telecommunications equipment, and semiconductor lasers on GaAs substrates offer excellent carrier confinement in high-temperature environments due to the large band offset of the conduction band. We report on the fabrication of 1.3 µm band Type-II quantum wells on GaAs substrates by metal-organic vapor deposition and the fabrication and characterization of lasers.