[17a-K504-1~6] 6.4 Thin films and New materials

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[17a-K504-3] Metal-insulator transition temperature in (V,W)O₂ thin films on TiO₂(001) and (100)

〇Yuji Muraoka¹, Shota Nakamura², yokoya Takayoshi¹ (1.RIIS. Okayama Univ., 2.ELST. Okayama Univ.)

Keywords:

W doped VO2 film,Metal insulator transition,Strain effect

Using the stain effect approach, the mechanism of metal-insulator transition (MIT) in highly W doped VO₂ (V,W)O₂ films is investigated. The (V,W)O₂ films with different c-axis length are grown on different crystal orientation of TiO₂(001) and (100), and the MIT transition temperature is evaluated by resistivity measurements. Consequelntly, the obtained results support the importance of d_// band which originates from the atomic orbital along with the c-axis direction in rutile-type tetragonal structure.