[17p-K101-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K101-6] Room temperature operation of GeSn/GeSiSn resonant tunneling diode

〇Shota Torimoto¹, Shuto Ishimoto¹, Yoshiki Kato¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2, Shigehisa Shibayama¹ (1.Nagoya Univ., 2.IMaSS)

Keywords:

Resonant tunneling diode,GeSn,GeSiSn