The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[17p-K101-1~12]13.5 Semiconductor devices/ Interconnect/ Integration technologies

Mon. Mar 17, 2025 1:30 PM - 4:45 PM JST
Mon. Mar 17, 2025 4:30 AM - 7:45 AM UTC
K101 (Lecture Hall Bldg.)
Takashi Matsukawa(AIST)
PR
SonySemiconductor
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[17p-K101-1]Variability Measurements in FDSOI MOSFETs with Dipole-Controlled Threshold Voltage

〇(M2)Sujung Chung1, Tomoko Mizutani1, Kiyoshi Takeuchi1, Takuya Saraya1, Masaharu Kobayashi1, Toshiro Hiramoto1 (1.IIS, Univ. of Tokyo)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[17p-K101-2]Examination of neural encoder using Dual Gate PN-Body Tied SOI-FET

〇(M2)Masaki Kobayashi1, Takayuki Mori1, Jiro Ida1 (1.Kanazawa Inst. of tech.)
Comment()
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[17p-K101-3]Silicon Lateral Power MOSFET Using Thim Film Super-Junction Structure

〇(M2)Jinsoo Lee1, Tomoyoshi Kushida1, Takuya Saraya1, Munetoshi Fukui1, Masaharu Kobayashi1,2, Toshiro Hiramoto1 (1.IIS, Univ. of Tokyo, 2.d.lab, Univ. of Tokyo)
Comment()
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)English Presentation

[17p-K101-4]The Influence of Hole Gas Accumulation on the Performance of Ge/Si Core–Shell Nanowire SWIR Photodetectors.

〇(D)Guanghui WANG1,2, Chao Le1,2, Wipakorn JEVASUWAN2, Naoki Fukata2 (1.Univ. of Tsukuba, 2.NIMS)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)English Presentation

[17p-K101-5]A Sensitive Acetone Sensor Based on Modifying Two-Dimensional WSe2 Surface

〇(D)CHEN LI1 (1.Univ. Tokyo)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K101-6]Room temperature operation of GeSn/GeSiSn resonant tunneling diode

〇Shota Torimoto1, Shuto Ishimoto1, Yoshiki Kato1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2, Shigehisa Shibayama1 (1.Nagoya Univ., 2.IMaSS)
Comment()
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[17p-K101-7]Another view of metal work function at M/S interface for Schottky barrier formation

〇Akira Toriumi1, Tomonori Nishimura2 (1.None, 2.Univ. Tokyo)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[17p-K101-8]Electrical characteristics of β-(Al,Ga)2O3 quasi-vertical Schottky barrier diodes

〇Kota Nakano1, Morita Ryo1, In Ka1, Okumura Hironori1, Sakurai Takeaki1 (1.Tsukuba Univ.)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-K101-9]Comparison of I-V characteristics of needle and junction contact Schottky barrier diodes using FeS2 crystal

〇Riku Ando1, Gaku Kamio1, Ren Morita1, Yoriko Suda1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[17p-K101-10]Low resistivity of Mo with high intensity FLA

〇Kanki Yoshida1, Shogo Sigemasu1, Hideaki Tanimura1, Katsuhiro Mitsuda1, Shinichi Kato1 (1.SCREEN Semiconductor Solutions Co., Ltd.)
Comment()
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[17p-K101-11]Energy-minimum point for PIM-type neural-network accelerator macros having parallelized MAC units

〇Yusaku Shiotsu1, Satoshi Sugahara1 (1.FIRST, Tokyo Inst. of Tech)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[17p-K101-12]Design of a Temperature Sensor Circuit for a Wearable Perspiration Measurement System

〇Yuichiro Ichmura1, Kenta Goto1, Koh Johguchi1 (1.Shinshu Univ.)
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