[17p-K305-1~12] 3.13 Silicon photonics, Photonics-electronics convergence, Optical control

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[17p-K305-7] Introduction to high displacement tolerant compound semiconductor and Si waveguide device bonding structure

〇Hideaki Okayama¹, Hiroyuki Takahashi¹, Hideaki Ono¹, Daisuke Shimura¹, Tanigawa Kenichi¹, Takahito Suzuki¹, Hironori Huruta¹, Nobuhiko Nishiyama² (1.OKI, 2.Science Univ. Tokyo)

Keywords:

heterogeneous integration,silicon waveguide

Bonding technologies for realizing integrated light source in silicon photonics are studied extensively. A sub micro-meter position accuracy was required to bond LD onto silicon waveguides. In this report we describe structures allowing displacement between silicon waveguide and LD of 2 to 3 micro-meters with coupling efficiency exceeding 90%.