[17p-K306-1~11] FS.1 Focused Session "AI Electronics"

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[17p-K306-10] Development of MoS₂-based Raman-ion-gating reservoir utilizing resonant Raman scattering and current response as computational resources

〇Yoshitaka Shingaya¹, Daiki Nishioka¹, Kazuya Terabe¹, Takashi Tsuchiya¹ (1.NIMS)

Keywords:

physical reservoir computing,resonant Raman scattering,ion-gating reservoir

We have realized a MoS₂-based Raman-ion-gating reservoir which utilize both resonant Raman scattering signals and current response in the channel region as computational resources by fabricating an electric double-layer transistor using MoS₂ on a solid electrolyte substrate.The computing performance in the nonlinear waveform transformation task and the second-order nonlinear dynamics equation analysis task were compared with and without the inclusion of Raman signals into the reservoir state.