[17p-K306-1~11] FS.1 Focused Session "AI Electronics"

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[17p-K306-11] Characterizations of Co2MnSi/MgO/Co2MnSi Magnetic Tunnel Junctions towards Binary Neural Network Applications in Advanced LSIs

〇Takao Marukame¹, Rei Kusunose¹, Tetsuya Uemura¹ (1.Hokkaido Univ.)

Keywords:

advanced smiconductor,binary neural network,magnetic tunnel junction

This study focuses on magnetic tunnel junctions (MTJs), one of the most reliable memory devices, with a view to their AI applications in advanced LSIs. In this paper, we report on our characterizations of MTJs and the circuit schemes for MTJ-based binary neural networks (BNNs), with the aim of clarifying the potential of MTJs for BNN hardware.