Presentation Information
[17p-K404-4]Influence of Contact Resistance on Operational Stability Evaluation of Polymer-Based Organic Field-Effect Transistors
〇Kenji Sakamoto1, Takeshi Yasuda1, Takeo Minari1, Masafumi Yoshio1, Junpei Kuwabara2, Masayuki Takeuchi1 (1.NIMS, 2.Univ. Tsukuba)
Keywords:
Organic field-effect transistors,Bias-stress effects,Polymeric organic semiconductors
High operational stability of organic field-effect transistors (OFETs) as well as high field-effect charge carrier mobility is important for their practical application. In this study, we found that the evaluation of the operational stability of polymer-based OFETs exhibiting changes in both mobility and threshold voltage during gate-bias stress was significantly affected by the presence of non-negligible contact resistance. This effect becomes pronounced for short-channel and high-mobility OFETs.
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