[17p-K505-1~13] 23.1 Joint Session N "Informatics"

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[17p-K505-9] Spectral Imaging Analysis of InGaN QWs Using Nonnegative Matrix Factorization II

〇Kazunori Iwamitsu¹, Kenta Sakai², Zentaro Akase¹, Atsushi Yamaguchi², Shigetaka Tomiya¹ (1.NAIST, 2.Kanazawa Inst. of Tech.)

Keywords:

Metrology Informatics,Spectral Imaging,Nonnegative Matrix Factorization

III-nitride semiconductors have the potential to realize light-emitting devices over a wide wavelength range from deep ultraviolet to red. However, various factors such as the influence of crystal defects like point defects and dislocations, and the increasing immiscibility with higher indium composition in InGaN quantum wells, need to be considered. We report the results of our investigation into the correlation between indium composition fluctuations and carrier behavior in a InGaN single quantum well layer, utilizing and analyzing emission spectrum imaging obtained through different methodologies.