[15a-M_124-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[15a-M_124-12] Critical Charge Characteristics of CFET SRAM under Single-Event Conditions

〇Koichi Fukuda¹, Junichi Hattori¹, Shinichiro Abe², Masanobu Hashimoto³ (1.AIST, 2.JAEA, 3.Kyoto Univ.)

Keywords:

semiconductor,CFET,SEU

Single-event critical charge characteristics of a CFET-based SRAM cell were evaluated using device simulations. The critical charge for charge injection into the channel and drain regions was compared with that of a bulk MOSFET-based SRAM under matched supply voltage and off-current conditions. The results indicate that the CFET SRAM exhibits a significantly smaller critical charge, especially for channel injection, suggesting strong charge confinement effects inherent to GAA-type structures.