[15a-M_124-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[15a-M_124-6] Dependence of Characteristics on Crystral Orientation and Channel Direction in Multi-Channel GAA MOSFETs

〇(M2)Ryusei Shimoda¹, Jun-Oh Kim¹, Daiki Futagi¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.Univ. Tokyo)

Keywords:

Gate-All-Around (GAA) MOSFET,Nanosheet,(110)

To advance CMOS scaling, MOSFET structures are transitioning from FinFETs to Gate-All-Around (GAA) architectures. On conventional (100) wafers, while the (110) sidewalls were predominant in FinFETs, the (100) top and bottom surfaces become dominant in nanosheet GAA structures. This shift raises concerns regarding hole mobility degradation and the resulting drive current imbalance between NMOS and PMOS. Consequently, GAA MOSFETs fabricated on (110) wafers have attracted significant attention. In this study, we fabricated p-type multi-channel GAA MOSFETs using both (110) and (100) SOI wafers and evaluated their intrinsic characteristics after de-embedding parasitic components.