[15a-M_124-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[15a-M_124-7] Study of TD(Tunnel-Dielectric) TFT with graphene/Si nanosheet structure

〇Naoto Matsuo¹, Akira Heya¹, Koji Sumitomo¹, Kazushige Yamana¹, Tetsuo Tabei² (1.Univ. Hyogo, 2.Hiroshima Univ.)

Keywords:

germanium,silicon,Tunnel-Dielectric TFT,TDTFT,Si nano-sheet

To realize the high performance Thin-Film Transistor (TFT), we proposed the Tunnel-Dielectric TFT(TDTFT) with the very thin dielectric films at the both ends of the channel. The advantages of the TDTFT are the lowering the gate off current and the supression of the hump effect. Furthermore, the TDTFT with fin structure was examined. On the other hand, we examined the conduction mechanism of the graphene analitically, and defined the π-electron path resistance. The purpose of this research is to examine the performance of the TDTFT with the graphene/Si nano-sheet structure. The electric field concentration at the edge of the Si nano-sheet is focused.