Presentation Information
[15a-PB1-7]Effect on mesa depth on reverse current in p-Ge1-xSnx/n-Ge diodes
〇Kei Yamamoto1, Shigehisa Shibayama1, Sakashita Mitsuo1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)
Keywords:
device structure,p-n diodes