Session Details
[15a-PB1-1~9]13.5 Semiconductor devices/ Interconnect/ Integration technologies
Sun. Mar 15, 2026 9:30 AM - 11:00 AM JST
Sun. Mar 15, 2026 12:30 AM - 2:00 AM UTC
Sun. Mar 15, 2026 12:30 AM - 2:00 AM UTC
PB1 (Martial Arts Hall (B1F))
[15a-PB1-1]Thermal desorption spectroscopy of water from hydrogen ion-implanted SiO2/Si structure with a band gap monitor for temperature control
〇Natsumi Aoki1, Kenshi Kimoto1, Kiyoteru Kobayashi1 (1.ESCO)
[15a-PB1-2]Multiphysics Analysis for Evaluating Electromigration Reliability in Fine-Pitch Interconnects
〇Kaito Tabata1, Kensei Kugio1, Rozu Henmi1, Yusuke Mizobata1, Sho Hamano1, Munehiro Tada1 (1.Keio Univ.)
[15a-PB1-3]Copper Strike Electroplating with Cellulose Nanofiber for Improved Throwing Power and Thick-Film Deposition while Maintaining Grain Refinement
〇Naoki Mizutani1, Ryuma Ishimine2, Hiroaki Koga3, Yujirou Takehara4, Masahiro Aoyagi4, Takeshi Hashishin3 (1.WDB Co., Ltd., 2.FE, Kumamoto Univ., 3.FAST, Kumamoto Univ., 4.SE, Kumamoto Univ.)
[15a-PB1-4]Prediction of Anisotropic Size Effect on Electrical Resistivity in Single-Crystalline Molybdenum Nanostructures
〇Takashi Kurusu1, Hiroyoshi Tanimoto1, Kazuya Ohuchi1 (1.KIOXIA)
[15a-PB1-5]Transient Thermal Response-Based Non-Destructive Failure Analysis for Through-Glass Vias
〇Byongjin Ma1, Juhee Baek1, Guesuk Lee1, Jemin Kim1 (1.KETI)
[15a-PB1-6]Characterization of layered thin films with oxide semiconductor in depth direction
〇Yusaku Tanahashi1, Tomohiro Sakata1, Yasufumi Kuwauchi1, Shingo Ogawa1, Hirofumi Seki1, Kota Sakai2, Masaharu Kobayashi2 (1.Toray Research Center, Inc., 2.University of Tokyo)
[15a-PB1-7]Effect on mesa depth on reverse current in p-Ge1-xSnx/n-Ge diodes
〇Kei Yamamoto1, Shigehisa Shibayama1, Sakashita Mitsuo1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)
[15a-PB1-8]Large-scale integration of MoS2–Hf0.5Zr0.5O2 ferroelectric memristors for in-memory image denoising in neural networks
〇(D)jeehwan lee1,2, Do Kyung Yoon1, Woo Jong Yu1 (1.SKKU Univ., 2.Samsung Electronics)
[15a-PB1-9]Coexisting Ferroelectric and Resistive Switching HfZrO2 Capacitors toward High-Density Integrated Memory Architecture
〇(D)KuanLin Chen1, Junkai Lai1, WenRuey Yang1, Karthekeyan Periasamy2,3, JerChyi Wang1,4,5 (1.Chang Gung Univ., 2.Aalto Univ., 3.Nokia Networks & Solutions Oy, 4.Chang Gung Memorial Hospital, 5.Ming Chi Univ. of Tech.)