[15a-PB2-1~16] 13.7 Compound and power devices, process technology and characterization

[15a-PB2-10] Characterization of plasma-induced defects in GaN by the reverse bias annealing (4)

〇Manato Fujitsuna¹, Seiji Nakamura¹ (1.Tokyo Metropolitan Univ.)

Keywords:

gallium ntride,plasma-induced defects,reverse bias annealing