[15a-PB2-1~16] 13.7 Compound and power devices, process technology and characterization

[15a-PB2-14] Effect of Channel Layer Thickness on Device Performance for Double-doped InAsSb HEMT by Quantum-Corrected Monte Carlo Simulation

Naoya Kodama¹, Chinatsu Hirohara¹, Tomoya Umekawa¹, 〇Akira Endoh¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science)

Keywords:

HEMT,InAsSb,Monte Carlo simulation