Presentation Information
[15a-PB2-3]Theoretical analysis of band alignments at 4H-SiC/SiO2 interface: Effects of NO annealing and interface defects
〇Naoto Ise1, Toru Akiyama1, Tetsuo Hatakeyama2, Kenji Shiraishi3, Takashi Nakayama4 (1.Mie Univ., 2.Toyama Pref. Univ., 3.Tohoku Univ., 4.Chiba Univ.)
Keywords:
SiC,MOSFET,NO-POA
Using first-principles calculations, we quantitatively evaluated the effects of nitrogen (N) atom incorporation on band alignments and dipole formation at 4H-SiC/SiO2 interfaces. At the N-incorporation limits, the CBO increased on the C-face due to enhanced interface dipoles, while it decreased on the m-face. Furthermore, the effects of N incorporation and residual C-C bond defects were analyzed. On the Si-face, the results suggested that N atoms near defects reverse the dipole direction, leading to a reduction in CBO. The influence of orientations and defects on band alignments is discussed.