Presentation Information
[15a-PB2-4]NIT-Induced Dynamic Geometric Component in p-Channel 4H-SiC MOSFETs Revealed by Multi-Frequency Charge Pumping
Yuta Taguchi1, 〇Dai Okamoto1 (1.Toyama Pref. Univ.)
Keywords:
silicon carbide,MOSFET,charge pumping
silicon carbide,MOSFET,charge pumping