Presentation Information

[15a-PB2-4]NIT-Induced Dynamic Geometric Component in p-Channel 4H-SiC MOSFETs Revealed by Multi-Frequency Charge Pumping

Yuta Taguchi1, 〇Dai Okamoto1 (1.Toyama Pref. Univ.)

Keywords:

silicon carbide,MOSFET,charge pumping