[15a-PB2-1~16] 13.7 Compound and power devices, process technology and characterization

[15a-PB2-6] Evaluation of Interface State Density Energy Distribution in Diamond MOSFET usage of 2-Dimensional Density of States Model

〇Kai Sato¹, Tsubasa Matsumoto¹, Kazuki Kobayashi¹, Kimiyoshi Ichikawa¹, Kan Hayashi¹, Masahiko Ogura², Toshiharu Makino², Soramitsu Kato², Daisuke Takeuchi², Masatsugu Nagai², Takao Inokuma¹, Satoshi Yamasaki¹, Norio Tokuda¹ (1.Kanazawa Univ., 2.AIST)

Keywords:

interface density of state,Metal-oxide-semiconductor-Field-effect-transistor (MOSFET),diamond