[15a-PB2-1~16] 13.7 Compound and power devices, process technology and characterization

[15a-PB2-7] Fabrication of inversion-type GaN MOSFET by applying simultaneous low-temperature annealing to MOS interface and ohmic contacts

〇Hiroto Akabane¹, Hinata Karasawa¹, Masanobu Takahashi¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

Keywords:

GaN