Presentation Information
[15a-PB2-8]Influence of Post-deposition Annealing Ambient on SiO2/n-Si and SiO2/n-GaN MOS Capacitors Formed by Atomic-Species-Enhanced Chemical Vapor Deposition
〇Ryuta Yoshikawa1, Hiroshi Okada1, Masakazu Hurukawa2, Akihiro Wakahara1, Hideaki Yamamoto1, Mituki Koda1 (1.Toyohashi University of Technology, 2.Arieace Reserch Ltd.)
Keywords:
Gallium Nitride (GaN),Silicon-based insulating film,Chemical Vapor Deposition
For the widespread adoption of wide bandgap semiconductors, the formation of high-quality insulating films is essential. In this study, SiO2 films were deposited on Si and GaN using the ground-state atomic-enhanced chemical vapor deposition (ASECVD) method, which allows for low-damage film formation. The effects of post-deposition annealing (PDA) temperature and ambient gas on electrical properties were evaluated, revealing that PDA at 600°C reduced leakage current. In particular, PDA in a forming gas (FG) atmosphere containing hydrogen improved interface characteristics, resulting in favorable C-V characteristics.