[15a-PB2-1~16] 13.7 Compound and power devices, process technology and characterization

[15a-PB2-9] Substrate bias dependence of transfer characteristics in GaN MOSFETs

〇Kenji Ito¹, Tetsuo Narita², Hiroko Iguchi², Shiro Iwasaki², Daigo Kikuta² (1.IMaSS, Nagoya Univ., 2.TOYOTA CENTRAL R&D Lab., INC.)

Keywords:

Gallium nitride,metal-oxide-semiconductor field-effect transistor,atomic layer deposition

Substrate bias dependence of transfer characteristics was evaluated in GaN-MOSFETs with AlSiO/AlN/p-GaN gate structures. By using AlN as a interfacial layer, the dependence of the threshold voltages were well-controled according to acceptor concentration in p-GaN body layer.