Presentation Information
[15a-S4_203-8]Laser Microjet Cutting of 0.5-inch Wafers for Minimal Fab and ASIC Prototyping
〇Hirofumi Sumi1, Naonobu Shimamoto1, Yukinori Ochiai1, Shinji Tsuboi1, Tohru Mogami1, Yoshio Mita1, Hideharu Amano1, Atsutake Kosuge1, Makoto Ikeda1 (1.The University of Tokyo)
Keywords:
Semiconductor LSI,ASIC,Minimal Fab
This study aims to establish a consistent process workflow that enables post-processing of ASICs fabricated on standard 200 mm wafers within the "Minimal Fab" environment. We employed Laser Microjet (LMJ) technology to excise 0.5-inch wafers from 200 mm substrates while suppressing thermal damage. Subsequently, a custom-developed automated beveling system was used to optimize wafer edge profiles, ensuring process compatibility for uniform resist coating. As a result, we successfully patterned the fifth metal layer using Minimal Fab equipment, including maskless lithography. This demonstrates a viable workflow for transferring devices from mass-production large-diameter wafers to the Minimal Fab line for subsequent wiring formation.
