[15a-S4_203-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology | The 73rd JSAP Spring Meeting 2026

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Oral presentation13 Semiconductors : 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[15a-S4_203-1~11]13.4 Si processing /Si based thin film / MEMS / Equipment technology

Sun. Mar 15, 2026 9:00 AM - 12:00 PM JST
Sun. Mar 15, 2026 12:00 AM - 3:00 AM UTC

S4_203 (South Bldg. 4)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[15a-S4_203-1]Development of Semiconductor Device Reconstruction Technology Using Minimal Fab

〇Ryuhei Sekifuji¹, Hiroshige Kogayu¹, Hiroshi Sugiyama¹, Hiroyuki Tanaka², Shuichi Noda², Noriko Miura², Shinichi Ikeda², Hiroyuki Gomyo³, Ichiro Suzuki³, Shiro Hara^1,2 (1.Hundred Semiconductors, 2.AIST, 3.Mach Corporation)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[15a-S4_203-2]Development of Multilayer Film Deposition Technology Using Minimal Fab

〇Ryuhei Sekifuji¹, Hiroshige Kogayu¹, Hiroyuki Tanaka², Shuichi Noda², Noriko Miura², Shinichi Ikeda², Hiroyuki Gomyo³, Ichiro Suzuki³, Shiro Hara^1,2 (1.Hundred Semiconductors, 2.AIST, 3.Mach Corporation)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[15a-S4_203-3]SC1/SC2 chemical cleaning using wafer droplet cleaning technology

〇Kazumasa Nemoto¹, Noriko Miura¹, Shinichi Ikeda¹, Shiro Hara^1,2 (1.AIST, 2.Hundred)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[15a-S4_203-4]Application study of hydrogen-atmosphere surface-treatment using the Minimal laser heating tool to semiconductor CMOS devices(Ⅲ)

〇kazushige sato^1,2, Takashi Chiba^1,2, Masao Terada^1,2, Kengo Hamada^1,2, Yoshiaki Kanamori³, Noriko Miura⁴, Shinichi Ikeda⁴, Shiro Hara⁴ (1.MINIMAL, 2.SAKAGUCHI ELECTRIC HEATERS, 3.TOHOKU UNIV, 4.AIST)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[15a-S4_203-5]Formation of Ferroelectric HfN_x Diodes Using Minimal Fab Reactive Sputtering Tool

〇Shuichi Noda¹, Yuuki Yabuta², Naoko Yamamoto², Ryuichiro Kamei², Noriko Miura¹, Shinichi Ikeda¹, Shun-ichiro Ohmi³, Shiro Hara^1,4 (1.AIST, 2.Seinan-kogyo, 3.Science Tokyo, 4.Hundred)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[15a-S4_203-6]Development of 2-Layer Al Wiring and TiN gate for SOI-CMOS process in Minimal-Fab Process

〇Hiroshige Kogayu¹, Ryuhei Sekifuji¹, Hiroyuki Tanaka², Noriko Miura², Shiro Hara^1,2 (1.Hundred, 2.AIST)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[15a-S4_203-7]Consideration of device design for manufacturing using Minimal Fab

〇Hiroyoshi Hongoh¹, Noriko Miura¹, Shinichi Ikeda¹, Shiro Hara^1,2 (1.AIST, 2.Hundred)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[15a-S4_203-8]Laser Microjet Cutting of 0.5-inch Wafers for Minimal Fab and ASIC Prototyping

〇Hirofumi Sumi¹, Naonobu Shimamoto¹, Yukinori Ochiai¹, Shinji Tsuboi¹, Tohru Mogami¹, Yoshio Mita¹, Hideharu Amano¹, Atsutake Kosuge¹, Makoto Ikeda¹ (1.The University of Tokyo)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[15a-S4_203-9]Evaluation of wafer processing using Minimal Fab

〇Tatsuya Fujita¹, Fumito Imura¹, Kazushige Sato², Shiro Hara^1,3 (1.Inc.Hundred Semiconductors, 2.MINIMAL, 3.AIST)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[15a-S4_203-10]Study of Si interposer fabrication using minimal fab

〇Hiroyuki Tanaka¹, Hiroshi Tokunaga², Kayo Tanoue³, Shinji Iseki³, Shouichi Yasuda³, Yoshiyuki Nozawa⁴, Toshihiro Hayami⁴, Hiroshi Sugiyama⁵, Fumito Imura⁵, Miura Noriko¹, Shinichi Ikeda¹, Shiro Hara^1,5 (1.AIST, 2.MTC, 3.KB, 4.SPPT, 5.HS)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[15a-S4_203-11]Impact of Minimal Water Plasma Ashing Process on Packaging Materials

〇Noriko Miura¹, Erdenezaya Bat-Orgil², Thiha Kyaw Swar², Hnin Thazin Hlaing², Hiroki Taniguchi², Hiroshi Sugiyama³, Fumito Imura³, Takeshi Aizawa⁴, Mitsunori Nogawa⁴, Yasuhiro Onishi⁴, Tatsuo Ishijima², Shinichi Ikeda¹, Shiro Hara^1,3 (1.AIST, 2.KANAZAWA Univ., 3.Hundred, 4.YONEKURA MFG. Co., LTD)

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