[15a-W2_401-1~9] 15.4 III-V-group nitride crystals

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[15a-W2_401-1] Device Structural Study of a Vertical BGaN Neutron Detector for Flip-Chip processing.

〇Sotaro Takenaka¹, Ryohei Kudo¹, Kosuke Ando¹, Yura Maeda¹, Eito Kokubo², Katsuyuki Takagi³, Genichiro Wakabayashi⁴, Tatsuro Oda⁵, Masahiro Hino⁶, Yoshio Honda⁷, Hiroshi Amano⁷, Yoku Inoue¹, Toru Aoki³, Takayuki Nakano^1,3 (1.Shizuoka Univ., 2.Nagoya Univ., 3.R.I.E. Shizuoka Univ., 4.Kindai Univ., 5.ISSP. Univ. of Tokyo, 6.KURNS Kyoto Univ., 7.IMaSS. Nagoya Univ.)

Keywords:

BGaN,neutron detector,semiconductor