[15a-W2_401-1~9] 15.4 III-V-group nitride crystals

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[15a-W2_401-5] Investigation of Fabrication Process for Electric-Field-Induced GaN Optical Waveguide Mach-Zehnder Interferometers with pin Structure

〇Shogo Katsuki¹, Issei Honda¹, Ryuki Sugano², Naoki Kubo², Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.The Univ. of Osaka, 2.Nichia Corporation)

Keywords:

Mach-Zehnder interferometers,optical device,gallium nitride

Optical AI accelerators utilizing cascaded Mach-Zehnder Interferometers (MZIs) are attracting significant attention as devices capable of lower power consumption and higher-speed computing compared to conventional electronic circuits. We have previously fabricated an electric-field-induced GaN optical waveguide MZI with a MOS structure and demonstrated its fundamental operation. In this study, we report on the fabrication process of an electric-field-induced GaN optical waveguide MZI with a pin structure, designed to achieve higher-speed modulation.