[15a-W8E_101-1~8] 13.3 Insulator technology

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[15a-W8E_101-2] Effect of deposition temperature on the electrical properties of RF sputter-deposited HfO₂/Ge structures

Daichi Yamada¹, Tetsuya Sato², 〇Yohei Otani¹ (1.Suwa Univ. of Sci., 2.Univ. of Yamanashi)

Keywords:

Ge,HfO2