[15a-W8E_101-1~8] 13.3 Insulator technology | The 73rd JSAP Spring Meeting 2026

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Oral presentation13 Semiconductors : 13.3 Insulator technology

[15a-W8E_101-1~8]13.3 Insulator technology

Sun. Mar 15, 2026 9:00 AM - 11:00 AM JST
Sun. Mar 15, 2026 12:00 AM - 2:00 AM UTC

W8E_101 (West Bldg. 8)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[15a-W8E_101-1]Effect of oxidation temperature on Ti/Ge structures formed by EB evaporation

Kazuo Sunahata¹, Kaito Nakao¹, Takeshi Miyairi¹, Tetsuya Sato², 〇Yohei Otani¹ (1.Suwa Univ. of Sci., 2.Univ. of Yamanashi)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[15a-W8E_101-2]Effect of deposition temperature on the electrical properties of RF sputter-deposited HfO₂/Ge structures

Daichi Yamada¹, Tetsuya Sato², 〇Yohei Otani¹ (1.Suwa Univ. of Sci., 2.Univ. of Yamanashi)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[15a-W8E_101-3]Two-step deposition and characterization of ultrathin GeO₂/Ge interfaces

〇Hiroki Inoue¹, Suzuki Takumi¹, Yoshitaka Iwasaki¹, Tomo Ueno¹, Mitaro Namiki¹ (1.Tokyo univ. of Agri & Tech)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15a-W8E_101-4]ALD-HKMG Ge(111) MOS structures for Ge GAA nFETs

〇Keisei Kawana^1,2, Noboru Fukuhara¹, Wen Chang¹, Chia Tsong Chen¹, Toshiyuki Tsutsumi^1,2, Tatsuro Maeda¹ (1.AIST, 2.Meiji Univ.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[15a-W8E_101-5]Ultrathin crystallized HfO₂/ZrO₂/HfO₂ films for high-k gate stacks in MOS structures

〇Takefumi Kamioka^1,2, Takamasa Kawanago^1,2, Yukinori Morita^1,2, Naoya Okada^1,2, Kenzo Manabe^1,2, Wataru Mizubayashi^1,2, Hiroyuki Ota^1,2, Takashi Matsukawa^1,2, Shinji Migita^1,2 (1.SFRC, AIST, 2.LSTC)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[15a-W8E_101-6]Oxygen-Passivated Interfacial Layer (O-PAS IL) for Ultra-Scaled (CET < 1 nm) High-k Gate Stacks

〇Yukinori Morita^1,6, Kawanago Takamasa^1,6, Takefumi Kamioka^1,6, Yuichro Mitani^2,6, Toshihide Nabatame^3,6, Takashi Onaya^3,6, Naoki Fukata^3,6, Wipakorn Jevasuwan^3,6, Kazuhito Tsukagoshi^3,6, Takuya Hoshii^4,6, Kasidit Toprasertpong^5,6, Atsushi Tamura^5,6, Koji Kita^5,6, Naoya Okada^1,6, Kenzo Manabe^1,6, Wataru Mizubayashi^1,6, Hiroyuki Ota^1,6, Takashi Matsukawa^1,6, Shinji Migita^1,6 (1.AIST, 2.Tokyo City Univ., 3.NIMS, 4.Science Tokyo, 5.The Univ. of Tokyo, 6.LSTC)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[15a-W8E_101-7]Interfacial Properties and Electrical Characteristics of Direct High-k Deposition on Si for CET Scaling

〇Takamasa Kawanago^1,2, Takefumi Kamioka^1,2, Yukinori Morita^1,2, Naoya Okada^1,2, Kenzo Manabe^1,2, Wataru Mizubayashi^1,2, Hiroyuki Ota^1,2, Takashi Matsukawa^1,2, Shinji Migita^1,2 (1.SFRC, AIST, 2.LSTC)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[15a-W8E_101-8]Changes in dipole effects of ALD-La₂O₃ and ALD-Al₂O₃ using PDA

〇Toshihide Nabatame^1,2, Tomomi Sawada^1,2, Hiromi Miura^1,2, Manami Miyamoto^1,2, Takashi Onaya^1,2, Kazuhito Tsukagoshi^1,2, Naoki Fukata^1,2, Wipakorn Jevasuwan^1,2, Shinji Migita^2,3 (1.NIMS, 2.LSTC, 3.AIST)

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