[15a-W8E_101-1~8] 13.3 Insulator technology

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[15a-W8E_101-3] Two-step deposition and characterization of ultrathin GeO₂/Ge interfaces

〇Hiroki Inoue¹, Suzuki Takumi¹, Yoshitaka Iwasaki¹, Tomo Ueno¹, Mitaro Namiki¹ (1.Tokyo univ. of Agri & Tech)

Keywords:

semiconductor

Ge-MOSFETs exhibit higher carrier mobility for both electrons and holes compared to Si, making them promising candidates for next-generation high-speed logic devices. However, GeO2, a candidate gate insulator, is water-soluble. When formed via thermal oxidation, it suffers from insufficient thickness uniformity and water solubility, making device reliability improvement an ongoing challenge. Ge-MOSFETs exhibit higher carrier mobility for both electrons and holes compared to Si, making them promising candidates for next-generation high-speed logic devices. However, GeO2, a candidate gate insulator, is water-soluble, and improving device reliability remains a challenge.This study systematically compares the effects of different deposition temperatures on the water resistance and electrical properties of GeO2 films. It also introduces a two-step process aiming to achieve both water resistance and high insulation.