Presentation Information
[15a-W8E_101-5]Ultrathin crystallized HfO2/ZrO2/HfO2 films for high-k gate stacks in MOS structures
〇Takefumi Kamioka1,2, Takamasa Kawanago1,2, Yukinori Morita1,2, Naoya Okada1,2, Kenzo Manabe1,2, Wataru Mizubayashi1,2, Hiroyuki Ota1,2, Takashi Matsukawa1,2, Shinji Migita1,2 (1.SFRC, AIST, 2.LSTC)
Keywords:
semiconductor,mos,high-k
