[15a-W8E_101-1~8] 13.3 Insulator technology

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[15a-W8E_101-7] Interfacial Properties and Electrical Characteristics of Direct High-k Deposition on Si for CET Scaling

〇Takamasa Kawanago^1,2, Takefumi Kamioka^1,2, Yukinori Morita^1,2, Naoya Okada^1,2, Kenzo Manabe^1,2, Wataru Mizubayashi^1,2, Hiroyuki Ota^1,2, Takashi Matsukawa^1,2, Shinji Migita^1,2 (1.SFRC, AIST, 2.LSTC)

Keywords:

semiconductor,high-k