[15p-70A_101-1~13] Atomic Layer Process (ALP) analysis and application technologies (3)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-70A_101-7] Comparison of HF Etching Characteristics of HfO₂ Thin Films Deposited by Thermal and Plasma-Enhanced Atomic Layer Deposition

〇Naohiro Furutani¹, Matsuo Kohei¹, Kobayashi Takayuki¹ (1.Samco Inc.)

Keywords:

Atomic layer deposition,HfO2 Thin films,HF Etching

HfO₂ thin films are widely used as insulating and protective layers in semiconductor devices, and their chemical resistance to HF-based solutions is an important property. Although the HF-based etching characteristics of HfO₂ thin films have been reported to depend on deposition conditions and film structure, systematic evaluations focusing on the influence of deposition methods on chemical resistance and accompanying changes in film properties remain limited. In this study, the HF-based etching characteristics of HfO₂ thin films deposited by plasma-enhanced atomic layer deposition (PE-ALD) and thermal atomic layer deposition (Thermal-ALD) were comparatively evaluated, and the effects of deposition methods on chemical resistance and film property changes were investigated.