[15p-70A_101-1~13] Atomic Layer Process (ALP) analysis and application technologies (3) | The 73rd JSAP Spring Meeting 2026

Session Details

Symposium (Oral)Symposium : Atomic Layer Process (ALP) analysis and application technologies (3)

[15p-70A_101-1~13]Atomic Layer Process (ALP) analysis and application technologies (3)

Sun. Mar 15, 2026 1:30 PM - 6:00 PM JST
Sun. Mar 15, 2026 4:30 AM - 9:00 AM UTC

70A_101 (70th Anniversary Auditorium)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[15p-70A_101-1]Computation of Al₂O₃ ALD by trimethylaluminum with Kinetic Monte Carlo and neural network potential

〇(M2)Yichen ZOU¹, Yuxuan Wu¹, Jun Yamaguchi¹, Noboru Sato¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.The Univ. Tokyo)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[15p-70A_101-2]Study of the desorption effect on the adsorption of Trimethylaluminum and water ALD

〇Yuxuan Wu¹, Noboru Sato¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.Univ. Tokyo)

2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[15p-70A_101-3]Atomic-Layer Process: Essential for 3D-Nano-Devices in Advanced LSIs

〇Hitoshi Wakabayashi¹ (1.Science Tokyo)

2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)

[15p-70A_101-4]Development of a gallium precursor for atomic layer deposition of high-purity thin films

〇Fumikazu Mizutani¹ (1.Kojundo Chem Lab)

3:15 PM - 3:45 PM JST(6:15 AM - 6:45 AM UTC)

[15p-70A_101-5]Atomic Scale Processing for Quantum Applications

〇Shohei Ito¹, ChunTing Shen¹, Nick Chittock² (1.OIKK, 2.OIPT)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[15p-70A_101-6]Significant Improvement of Contact Performance by Low Damage Atomic Layer Etching

〇Akiko Hirata¹, Masanaga Fukasawa¹, Hiroyuki Ota¹, Atsushi Yagishita¹, Tetsuya Ueda¹, Kenzou Manabe¹, Wataru Mizubayashi¹, Yoshihiro Hayashi¹, Meishoku Masahara¹ (1.SFRC AIST)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-70A_101-7]Comparison of HF Etching Characteristics of HfO₂ Thin Films Deposited by Thermal and Plasma-Enhanced Atomic Layer Deposition

〇Naohiro Furutani¹, Matsuo Kohei¹, Kobayashi Takayuki¹ (1.Samco Inc.)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[15p-70A_101-8]High-Throughput SiN-ALD and Selective Deposition Enabled by Hydrazine

〇(D)Hayato Murata^1,2, Yoshifumi Wada², Hideharu Shimizu², Takeshi Momose³ (1.GSST, Kumamoto Univ., 2.TAIYO NIPPON SANSO, 3.REISI, Kumamoto Univ.)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-70A_101-9]Study on the effect of NH₃ addition in Mo-CVD/ALD using Mo(CO)₆ as precursor

〇Soga Nagai¹, Soken Obara¹, Jun Yamaguchi¹, Noboru Sato¹, Yuhei Otaka¹, Naoki Tamaoki¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.Univ. Tokyo)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[15p-70A_101-10]Process development of area-selective Co-ALD using in-situ spectroscopic ellipsometry

〇Naoki Tamaoki¹, Jun Yamaguchi¹, Noboru Sato¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.Univ. Tokyo)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[15p-70A_101-11]Prediction of Vapor Pressure Parameters Based on Adsorption Free Energy Calculations of ALD Precursors Using uMLIP

〇Yusuke Asano¹ (1.Matlantis Corp.)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[15p-70A_101-12]Development of novel Co-ALD processes using neural network potential molecular

〇(P)Noboru Sato¹, Keisuke Tanichi¹, Naoyuki Hoshiya², Akiyoshi Yamauchi², Shigehito Sagisaka², Yosuke Kishikawa², Jun Yamaguchi¹, Naoki Tamaoki¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.The Univ. of Tokyo, 2.Daikin Ind.)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[15p-70A_101-13]Surface reaction analysis of area-selective Co-ALD by using MLPs

〇Naoki Tamaoki¹, Jun Yamaguchi¹, Noboru Sato¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.Univ. Tokyo)

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