[15p-70A_101-1~13] Atomic Layer Process (ALP) analysis and application technologies (3)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[15p-70A_101-8] High-Throughput SiN-ALD and Selective Deposition Enabled by Hydrazine

〇(D)Hayato Murata^1,2, Yoshifumi Wada², Hideharu Shimizu², Takeshi Momose³ (1.GSST, Kumamoto Univ., 2.TAIYO NIPPON SANSO, 3.REISI, Kumamoto Univ.)

Keywords:

atomic layer deposition,area selective deposition,hydrazine

SiN-ALD was perfomed using hydrazine, which is more reactive than conventional nitriding agents such as ammoinia. We propose a method that achieves both reduced incubation cycles and enhanced selectivity by utilizing hydrazine in this presentation.