Symposium (Oral) Symposium : Atomic Layer Process (ALP) analysis and application technologies (3)
Sun. Mar 15, 2026 4:30 AM - 9:00 AM UTC
Chair : Fumihiko Hirose(Yamagata Univ.), Kazuhiro Karahashi(Nagoya Univ.), Shuji Azumo(Tokyo Electron Technology Solutions Ltd.)
In the afternoon, the program begins with two contributed presentations in English, followed by a Japanese session consisting of three invited talks and eight contributed talks. The invited talks will outline future directions of ALP, including its role in advanced 3D nanodevices, the development of high-purity gallium precursors for atomic layer deposition, and atomic-scale processing toward quantum applications. The contributed talks will showcase a broad range of recent results, from low-damage ALE, selective growth, and higher-throughput processing to reaction analysis and process optimization using approaches such as KMC and NNP.
4:15 PM - 4:30 PM JST (7:15 AM - 7:30 AM UTC)
[15p-70A_101-8] High-Throughput SiN-ALD and Selective Deposition Enabled by Hydrazine〇(D)Hayato Murata1,2 , Yoshifumi Wada2 , Hideharu Shimizu2 , Takeshi Momose3 (1.GSST, Kumamoto Univ., 2.TAIYO NIPPON SANSO, 3.REISI, Kumamoto Univ.)
Download PDF Comment( Keywords: atomic layer deposition,area selective deposition,hydrazine
SiN-ALD was perfomed using hydrazine, which is more reactive than conventional nitriding agents such as ammoinia. We propose a method that achieves both reduced incubation cycles and enhanced selectivity by utilizing hydrazine in this presentation.
