Presentation Information
[15p-70A_101-9]Study on the effect of NH3 addition in Mo-CVD/ALD using Mo(CO)6 as precursor
〇Soga Nagai1, Soken Obara1, Jun Yamaguchi1, Noboru Sato1, Yuhei Otaka1, Naoki Tamaoki1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.Univ. Tokyo)
Keywords:
molybdenum,bottom-up fill,suppressor
Molybdenum (Mo) is a promising candidate for interconnect materials in next-generation ULSI devices. To achieve gap-free filling of high-aspect-ratio structures and low resistivity, bottom-up fill deposition is desirable. In copper electroplating, bottom-up filling is achieved by adding suppressors to inhibit film growth at the trench opening. Aiming to apply this mechanism to vapor phase deposition, this study investigated the inhibition effect of NH3 addition on precursor adsorption in Mo-CVD/ALD processes using Mo(CO)6.