[15p-70A_101-1~13] Atomic Layer Process (ALP) analysis and application technologies (3)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-70A_101-9] Study on the effect of NH₃ addition in Mo-CVD/ALD using Mo(CO)₆ as precursor

〇Soga Nagai¹, Soken Obara¹, Jun Yamaguchi¹, Noboru Sato¹, Yuhei Otaka¹, Naoki Tamaoki¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.Univ. Tokyo)

Keywords:

molybdenum,bottom-up fill,suppressor

Molybdenum (Mo) is a promising candidate for interconnect materials in next-generation ULSI devices. To achieve gap-free filling of high-aspect-ratio structures and low resistivity, bottom-up fill deposition is desirable. In copper electroplating, bottom-up filling is achieved by adding suppressors to inhibit film growth at the trench opening. Aiming to apply this mechanism to vapor phase deposition, this study investigated the inhibition effect of NH₃ addition on precursor adsorption in Mo-CVD/ALD processes using Mo(CO)₆.