[15p-M_124-1~16] 17.3 Layered materials

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-M_124-11] Fabrication and Electrical Characterization of Monolayer WS₂ Field-Effect Transistors with Janus WSH-Semimetal Contact

〇(M1)Shoma Hori¹, Yasuhiko Hayashi¹, Hiroo Suzuki¹ (1.Okayama Univ.)

Keywords:

transition metal dichalcogenides,feild-effect transistors,Janus TMDC

We attempted to improve the electrical performance of monolayer WS₂ field-effect transistors (FETs) by reducing the contact resistance using Janus WSH-semimetal contacts. Janus WSH was formed by hydrogen plasma treatment at the contact regions of monolayer WS₂, after which FETs were fabricated using semimetallic Sb electrodes. Compared with conventional WS₂-Sb contacts, the subthreshold swing was reduced to approximately one third, while the field-effect mobility was enhanced by about one order of magnitude, demonstrating a significant improvement in the electrical characteristics.