The 73rd JSAP Spring Meeting 2026
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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[15p-M_124-1~16]17.3 Layered materials

Sun. Mar 15, 2026 2:00 PM - 6:15 PM JST
Sun. Mar 15, 2026 5:00 AM - 9:15 AM UTC
M_124 (Main Bldg.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-M_124-1]Mirror Twin Boundary Formation in WSe2 by Nb Post-doping

〇(M2)Itsuki Tanaka1, Tomonori Nishimura1, Kaito Kanahashi1, Mai Nakashima2, Naoshi Kakeya2, Kohei Aso2, Yoshifumi Oshima2, Jui-Han Fu3, Vincent Tung3, Kouske Nagashio1 (1.UTokyo Material, 2.JAIST, 3.UTokyo Chem. Sys.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-M_124-2]Demonstration of SS < 60 mV/dec P-TFET using Re-substitutionally doped MoSe2

〇Toshinari Sugiyama1, Satoru Morito2, Ayaka Wakabayashi2, Tomonori Nishimura1, Kaito Kanahashi1, Takashi Taniguchi3, Kenji Watanabe3, Keiji Ueno2, Kosuke Nagashio1 (1.UTokyo, 2.Saitama Univ., 3.NIMS)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[15p-M_124-3]P-type nitrogen doping of PVD-WS2 film using H2/N2 gas plasma

〇Kaede Teraoka1, Soma Ito1, Jaehyo Jang1, Naoki Matsunaga1, Shunsuke Nozawa1, Taiga Fuse1, Takuya Hoshii1, Kuniyuki Kakushima1, Hitoshi Wakabayashi2 (1.Science Tokyo, 2.Science Tokyo IIR)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[15p-M_124-4]Demonstration of sub-Boltzmann-limit Subthreshold Swing in In-Plane Tunnel FETs Using Substitutionally Doped TMDCs

〇Kaito Kanahashi1, Tomonori Nishimura1, Keiji Ueno2, Kosuke Nagashio1 (1.U. Tokyo, 2.Saitama Univ.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-M_124-5]Direct Growth of High-κ Dielectrics on WSe2 via ALD: Interface Control by UV-O3 Treatment

〇Riku Enomoto1, Kensho Matsuda1, Ke Mengnan2, Peter Kruger1, Nobuyuki Aoki1 (1.Chiba Univ., 2.Yokohama National Univ.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[15p-M_124-6]Establishing HfO2 deposition method on 1L-MoS2 via off-axis selective deposition

〇Hiroyasu Maekawa1, Tomonori Nishimura1, Kaito Kanahashi1, Yoshiki Sakuma2, Kosuke Nagashio1 (1.The Univ. of Tokyo, 2.NIMS)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-M_124-7]Characterization of graphene for realization of ultra-thin gate metal

〇Yuto Noguchi1, Kensho Matsuda1, Mengnan Ke2, Shohei Kumagai3, Toshihiro Okamoto3, Nobuyuki Aoki1 (1.Chiba Univ., 2.Yokohama National Univ., 3.Science Tokyo)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-M_124-8]High current density in electric double layer light-emitting devices of WSe2 monolayers

〇koshi Oi1, Hou Ou2, Jiang Pu2, Endo Takahiko3, Miyata Yasumitu3, Takenobu Taishi1 (1.Nagoya Univ., 2.Institute of Science Tokyo, 3.NIMS (MANA))
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-M_124-9]NixNbyS2 Contacts for MoS2-channel nFETs Enabled by Initial Stack Thickness Control

〇Koki Hori1,2, Wen-Hsin Chang1, Toshifumi Irisawa1, Atsushi Ogura2,3, Naoya Okada1 (1.SFRC, AIST, 2.Meiji Univ., 3.MREL)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-M_124-10]Effect of Ni0.19Nb1.16S2 as Source/Drain Edge Contacts for Monolayer MoS2 nFETs

〇Koki Hori1,2, Wen-Hsin Chang1, Toshifumi Irisawa1, Atsushi Ogura2,3, Naoya Okada1 (1.SFRC, AIST, 2.Meiji Univ., 3.MREL)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-M_124-11]Fabrication and Electrical Characterization of Monolayer WS2 Field-Effect Transistors with Janus WSH-Semimetal Contact

〇(M1)Shoma Hori1, Yasuhiko Hayashi1, Hiroo Suzuki1 (1.Okayama Univ.)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[15p-M_124-12]The variation in WSe2 FET induced by the strain during electrodes deposition

〇Ryuichi Nakajima1, Tomonori Nishimura1, Kaito Kanahashi1, Keiji Ueno2, Takahiko Endo3, Yasumitsu Miyata3, Kosuke Nagashio1 (1.The Univ. of Tokyo, 2.Saitama Univ., 3.NIMS)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-M_124-13]Electrical Transport Properties of All-2D Anti-Ambipolar Transistor

〇Kentarou Uzawa1,2, Ryoma Hayakawa2, Takuya Iwasaki2, Kenji Watanabe2, Takashi Taniguchi2, Yutaka Wakayama1,2, Satoshi Moriyama1,2 (1.Tokyo Denki Univ., 2.NIMS)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-M_124-14]Excitonic emission modulation in monolayer WSe2 by standing surface acoustic waves

〇(M2)Yuta Takahashi1, Takumi Yamamoto1, Hidetoshi Kanzawa1, Kazuki Maezawa1, Hajime Kumazaki1, Shinichi Watanabe1, Shun Fujii1 (1.Keio Univ.)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[15p-M_124-15]Ultrafast dynamic modulation of second-harmonic generation in monolayer transition metal dichalcogenides by surface acoustic wave

〇Hidetoshi Kanzawa1, Takumi Yamamoto1, Yuta Takahashi1, Hajime Kumazaki1, Jiang Pu2, Shinichi Watanabe1, Shun Fujii1 (1.Keio Univ., 2.Science Tokyo)
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[15p-M_124-16]External electric field induced bulk photovoltaic effect in 2D antiferromagnetic material

〇Shuichi Asada1, Shinichiro Matano1, Kenji Watanabe2, Takashi Taniguchi2, Kazunari Matsuda1 (1.IAE, Kyoto Univ., 2.NIMS)
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