[15p-M_124-1~16] 17.3 Layered materials

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[15p-M_124-12] The variation in WSe₂ FET induced by the strain during electrodes deposition

〇Ryuichi Nakajima¹, Tomonori Nishimura¹, Kaito Kanahashi¹, Keiji Ueno², Takahiko Endo³, Yasumitsu Miyata³, Kosuke Nagashio¹ (1.The Univ. of Tokyo, 2.Saitama Univ., 3.NIMS)

Keywords:

WSe2,p-FET,Strain

The variation of electrical properties in WSe₂ FETs was induced by the strain during electrdoes deposition. Using the continous WSe₂ film grown by CVD, the modulation of the band alignment could be estimated.