[15p-M_124-1~16] 17.3 Layered materials

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[15p-M_124-4] Demonstration of sub-Boltzmann-limit Subthreshold Swing in In-Plane Tunnel FETs Using Substitutionally Doped TMDCs

〇Kaito Kanahashi¹, Tomonori Nishimura¹, Keiji Ueno², Kosuke Nagashio¹ (1.U. Tokyo, 2.Saitama Univ.)

Keywords:

two-dimensional material,Tunnel FET,Transition metal dichalcogenide