[15p-M_124-1~16] 17.3 Layered materials

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-M_124-5] Direct Growth of High-κ Dielectrics on WSe₂ via ALD: Interface Control by UV-O₃ Treatment

〇Riku Enomoto¹, Kensho Matsuda¹, Ke Mengnan², Peter Kruger¹, Nobuyuki Aoki¹ (1.Chiba Univ., 2.Yokohama National Univ.)

Keywords:

Transition Metal Dichalcogenides,2D Materials,high-k insulator

WSe₂ is a promising next-generation semiconductor, but its inert surface hinders uniform Al₂O₃ growth via ALD. This study investigates a room-temperature UV-O₃ treatment that promotes ALD nucleation by creating selenium vacancies and oxygen substitution rather than full oxidation. While a 40-minute irradiation achieved an ultra-flat Al₂O₃ film (RMS ~0.2 nm), we evaluated its impact on WSe₂-FET electrical characteristics and crystal structure using AFM and Raman spectroscopy. This presentation discusses the correlation between these physical changes and device performance.