[15p-S4_203-1~16] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[15p-S4_203-1] [The 3rd Kenji Natori Award Speech] Growth of (001) Single-Crystal Strips in Sputtered Si by μCLS for Device Application

〇Ryota Nosu¹ (1.Shimane Univ.)

Keywords:

semiconductor,transistor,silicon

Formation of single-crystal Si on insulators is essential for realizing next-generation devices. We have demonstrated the growth of single-crystal Si strips on SiO₂ and low-temperature high-performance TFT operation using the micro-chevron laser scanning (μCLS) method. In this presentation, we introduce the application of crystal orientation control to various deposition methods and its extension to device applications.