[15p-S4_203-1~16] 13.4 Si processing /Si based thin film / MEMS / Equipment technology | The 73rd JSAP Spring Meeting 2026

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Oral presentation13 Semiconductors : 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[15p-S4_203-1~16]13.4 Si processing /Si based thin film / MEMS / Equipment technology

Sun. Mar 15, 2026 2:00 PM - 6:15 PM JST
Sun. Mar 15, 2026 5:00 AM - 9:15 AM UTC

S4_203 (South Bldg. 4)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[15p-S4_203-1][The 3rd Kenji Natori Award Speech] Growth of (001) Single-Crystal Strips in Sputtered Si by μCLS for Device Application

〇Ryota Nosu¹ (1.Shimane Univ.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-S4_203-2]Fabrication and Evaluation of ptype FDSOI-MOSFETs
having subthreshold swing of 63.9±0.39mV/dec

〇(B)Kiichi Imayama¹, Ryota Nosu¹, Wenchang Yeh¹ (1.Shimane Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[15p-S4_203-3]FDSOI-MOSFETs with SS of 60.5±0.1mV/dec and on/off ratio over 11 digits

〇WENCHANG YEH¹, Ryota Nosu¹ (1.Shimane Univ.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-S4_203-4]High-Performance SOQ MOSFETs Fabricated on (001) μCLS-Si Single-Crystal Strips

〇(M2)Ryota Nosu¹, Wenchang Yeh¹ (1.Shimane Univ.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[15p-S4_203-5]Threshold voltage control of FDSOI-MOSFET by gate metal

〇WENCHANG YEH¹, Ryota Nosu¹ (1.Shimane Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[15p-S4_203-6]Comparison of Microwave and Laser Heating in Ion Implanted Silicon Substrates

〇Satoshi Fujii¹, Hanae Yoshida¹, Kazushige Sato^2,4, Akira Uedono³ (1.N.I.T, Okinawa Col., 2.Sakaguchi Ele. Heat., 3.Tsukuba Univ., 4.Minimal)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-S4_203-7]B doping into Si using ion implantation and KrF excimer laser annealing

〇(M1)Takumi Narazaki¹, Ktatayama Keita^1,2, Liu Yifan¹, Hisato Yabuta^1,2 (1.ISEE, Kyushu Univ., 2.GigaphotonNextGLP, Kyushu Univ.)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[15p-S4_203-8]Enhancing electron mobility of InZnOx channel thin-film-transistors by FLA

〇Yuma Ueno¹, Li-Chi Peng², Tsung-Te Chou³, Edward Yi Chang², Chun-Hsiung Lin², Kenji Inoue¹, Katsuhiro Mitsuda¹, Shinichi Kato¹ (1.SCREEN SPE, 2.NYCU, 3.NCIR)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[15p-S4_203-9]Fabrication and Electrical Characterization of pn-Junction Tunnel Diodes Using ECR Plasma CVD without Substrate Heating

〇Seima Sato^1,2, Tetsuya Ueno^1,2, Masao Sakuraba^1,2, Shigeo Sato^1,2 (1.Tohoku Univ., 2.RIEC)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-S4_203-10]Effect of Substrate Impurity Concentration on Interstitial Si and complex defect generated by Trench Processing

〇Koki Tomita¹, Ito Yuta¹, Fujimori Ryota¹, Masuda Taiki¹, Ogura Atsushi^1,2, Ishimura Satoshi³, Kuboi Nobuyuki³, Saga Koichiro³ (1.Meiji Univ., 2.MREL, 3.Sony Semiconductor Solutions Corporation)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[15p-S4_203-11]Clarification of the coating mechanism aimed at improving the uniformity of resist coating width in the wafer edge protection process

〇Yuto Shioya¹, Takayoshi Honda¹, Yoshiya Hagimoto¹ (1.Sony Semiconductor Solutions Corp.)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-S4_203-12]Impact of Si surface nanostructure on water boiling behavior

〇(B)Jun Onoe¹, Kantaro Kobayashi¹, Rikuto Enoki¹, Hiroaki Kakiuchi¹, Hiromasa Ohmi¹ (1.UOsaka)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[15p-S4_203-13]Real-time multi-point measurement of silicon wafer surface temperature using Optical Interference Contactless Thermometry (OICT)

〇Harumu Ono¹, Jiawen Yu¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[15p-S4_203-14]Ultra-Low-Temperature Formation of Thermal-Oxide-Grade SiO₂via Interface-Driven Self-Organization on Room-Temperature Sputtered SiO₂

〇Kohei Sakaike¹, Seiichiro Higashi² (1.NIT, Hiroshima college, 2.Hiroshima Univ.)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[15p-S4_203-15]RTA Crystallization of InSb Films on Polyimide Deposited by RF Sputtering Using Ne

〇Tatsushi Higa¹, Shuhei Shimizu¹, Takashi Noguchi¹, Takashi Kajiwara², Taizoh Sadoh², Tetsuo Okuyama³, Toshiyuki Tsuchiya³, Shinichi Taniguchi⁴, Shokichi Yoshitome⁴, Tatsuya Okada¹ (1.Univ. Ryukyus, 2.KyuShu Univ., 3.Toyobo Co., LTD, 4.e-tec Co., LTD)

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[15p-S4_203-16]Metal work-function and Fermi-level pinning on semiconductors (II)

〇Akira Toriumi¹, Tomonori Nishimura² (1.None, 2.Univ. Tokyo)

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