[15p-S4_203-1~16] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-S4_203-2] Fabrication and Evaluation of ptype FDSOI-MOSFETs
having subthreshold swing of 63.9±0.39mV/dec

〇(B)Kiichi Imayama¹, Ryota Nosu¹, Wenchang Yeh¹ (1.Shimane Univ.)

Keywords:

SOI,MOSFET

We have proposed a cleanroom-free 3D IC fabrication concept that forms semiconductor circuits on quartz substrates using only sputtering. In this study, we established a process for fabricating pMOSFETs on SOI substrates using this proprietary technology and herein report their characteristics.