[15p-S4_203-1~16] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-S4_203-4] High-Performance SOQ MOSFETs Fabricated on (001) μCLS-Si Single-Crystal Strips

〇(M2)Ryota Nosu¹, Wenchang Yeh¹ (1.Shimane Univ.)

Keywords:

semiconductor,transistor,silicon

The realization of 3D-LSI requires technology for forming crystalline thin films with controlled orientation on SiO₂. Our unique micro-chevron laser scanning (μCLS) method achieved (001) crystal orientation control for Si/Ge, demonstrating single-crystal-like characteristics in Si throughout the entire sputtering process. However, due to microcrystals on both sides of the single-crystal region, the characteristics did not match those of SOI-MOSFETs. In this study, SOQ MOSFETs were fabricated in the Si region with the microcrystalline areas removed using a high-temperature process. Their characteristics were compared with those of reference SOI MOSFETs fabricated using the same process.