[15p-S4_203-1~16] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[15p-S4_203-6] Comparison of Microwave and Laser Heating in Ion Implanted Silicon Substrates

〇Satoshi Fujii¹, Hanae Yoshida¹, Kazushige Sato^2,4, Akira Uedono³ (1.N.I.T, Okinawa Col., 2.Sakaguchi Ele. Heat., 3.Tsukuba Univ., 4.Minimal)

Keywords:

minimal fab.,microwave heating,laser heating

Precise modulation of carrier concentrations is indispensable for extending Si based MOSFET logic technologies to the 2 nm node. While ultrafast laser and femtosecond laser annealing provide high temperature, diffusion suppressed activation, claims of microwave annealing, MWA, enabling supra equilibrium dopant activation remain experimentally ambiguous due to the widespread use of multimode systems with poorly defined electromagnetic fields and physically unsubstantiated non thermal hypotheses. Fujii et al. demonstrated reproducible low temperature activation using a TM010 cavity, attributing the effect to electron vibration driven electromigration, though the configuration inherently promotes plasma formation through field concentration at quartz fixtures. To overcome these limitations, we developed a TE100 cavity engineered to suppress field localization and applied it to MWA of B implanted Si, alongside matched condition laser annealing. Comparative activation behavior and defect evolution, supported by positron annihilation spectroscopy, will be presented to elucidate the distinct pathways governing microwave and laser induced low temperature activation.